Design Method of Inductor-integrated High-power High-frequency Transformers

正This paper presents a design optimization procedure for high-power high-frequency transformer(HFT)used in solid-state transformers(SST).HFTs in DAB dc-dc converters require a specific inductance to lead to a shift in the soft switching region.The inductance,as shown in     

Revisiting CO2 emissions convergence in G18 countries

This study revisits whether CO₂ emissions converge in G18 countries over the period of 1950–2013. To work on this empirical analysis, we employ a more powerful quantile unit root test with per capita CO₂ emissions. While conventional unit root tests fail to reject convergence in CO₂ emissions in these G18 countries, quantile unit root test results demonstrate CO₂ emissions converged in 5 of these G18 countries (i.e., Australia, Brazil, Canada, Germany, and India). Our empirical results have important policy implications for the governments of G18 countries to direct efficient and effective energy policies to reduce the CO₂ emissions.     

纳米纤维素的疏水改性及应用研究进展

纳米纤维素作为一种性能优越的可再生纳米材料，应用前景极为广阔。然而，由于纳米纤维素结构上富含羟基，使其具有极强的亲水性，严重影响了纳米纤维素的疏水性能，并且在一定程度上限制了其在复合材料领域的应用。综述了纳米纤维素疏水改性的研究进展，从物理吸附、表面化学修饰（甲硅烷化、烷酰化、酯化等）、聚合物接枝共聚3个方面简述了目前应用较为广泛的疏水化改性方法，并对疏水纳米纤维素在包装材料、造纸、水净化等方面的应用现状进行了总结。最后对疏水改性纳米纤维素的未来发展进行了展望，旨在为疏水纳米纤维素的研究和应用提供参考。     

Investigation on the anti-reduction mechanism of Ti4+ in high dielectric constant system Ca0.9La0.067TiO3 by doping with Al2O3

Ca_0.9La_0.067TiO₃ (abbreviated as CLT) ceramics doped with different amount of Al₂O₃ were prepared via the solid state reaction method. The anti-reduction mechanism of Ti⁴⁺ in CLT ceramics was carefully investigated. X-ray diffraction (XRD) was used to analyze the phase composition and lattice structure. Meanwhile, the Rietveld method was taken to calculate the lattice parameters. X-ray photoelectron spectroscopy (XPS) was employed to study the valence variation of Ti ions in CLT ceramics without and with Al₂O₃. The results showed that Al³⁺ substituted for Ti⁴⁺ to form solid solution and the solid solubility limit of Al³⁺ is near 1.11 mol%. Furthermore, the reduction of Ti⁴⁺ in CLT ceramics was restrained by acceptor doping process and the Q × f values of CLT ceramics were improved significantly. The CLT ceramic doped with 1.11 mol% Al₂O₃ exhibited good microwave dielectric properties: ε_r = 141, Q × f = 6848 GHz, τ_f = 576 ppm/°C.     

A low power and low phase-noise 91~96 GHz VCO in 90 nm CMOS

This paper reports a 94 GHz CMOS voltage-controlled oscillator (VCO) using both the negative capacitance (NC) technique and series-peaking output power and phase noise (PN) enhancement technique. NC is achieved by adding two variable LC networks to the source nodes of the active circuit of the VCO. NMOSFET varicaps are adopted as the required capacitors of the LC networks. In comparison with the conventional one, the proposed active circuit substantially decreases the input capacitance (C_in) to zero or even a negative value. This leads to operation (or oscillation) frequency (OF) increase and tuning range (TR) enhancement of the VCO. The VCO dissipates 8.3 mW at 1 V supply. The measured TR of the VCO is 91~96 GHz, close to the simulated (92.1~96.7 GHz) and the calculated one (92.2~98.2 GHz). In addition, at 1 MHz offset from 95.16 GHz, the VCO attains an excellent PN of – 98.3 dBc/Hz. This leads to a figure-of-merit (FOM) of ?188.5 dBc/Hz, a remarkable result for a V- or W-band CMOS VCO. The chip size of the VCO is 0.75 × 0.42 mm², i.e. 0.315 mm².